This file contains the program of the 1991 Gordon Conference on

INORGANIC INTERFACES AND THIN FILMS

Plymouth State College (South), New Hampshire, USA.

  • July 8th-12th, 1991

  • Chair, Marjorie Olmstead; Vice-Chair, Robert Hull


  • Sunday Evening, July 7th, Welcome reception, registration
    Monday Morning, July 8th
  • GROWTH INITIATION AND SURFACE EFFECTS

    Chair: E.D. Williams, University of Maryland, College Park
    
    J.A. Venables, Arizona State U., Tempe, and U. of Sussex, Brighton, UK 
    Nucleation, Growth and Surface Diffusion Processes in Heteroepitaxy
    
    M.G. Lagally, University of Wisconsin, Madison
    Scanning Tip Microscocopy of Semiconductor Growth Surfaces
    
    E. Kaxiras, Naval Research Labs, Washington, DC
    Strain and Electronic Energies in Growth Initiation
      
    
    Monday Evening, July 8th
    
  • SURFACE ENERGETICS

    Chair: E. Carter, University of California, Los Angeles
    
    G.H. Gilmer, AT&T Bell Labs, Murray Hill, NJ
    Molecular Dynamics Simulations of Surface Kinetics
    
    M. Copel, IBM Watson Research Labs, Yorktown Heights, NY
    Structure and Surfactants for Group IV heteroepitaxy
    
    
    Tuesday Morning, July 9th
    
  • GROWTH KINETICS

    Chair: M. Zinke-Allmang, University of Western Ontario, London, Ontario
    
    B. Dodson, Sandia National Labs, Albuquerque
    Strained-Layer Relaxation Kinetics
    
    P.I. Cohen, University of Minnesota, Minneapolis
    Dynamics of MBE Growth- the Role of Defects 
    
    D.E Aspnes, Bellcore, Redbank, NJ
    A New Look at OMCVD Growth by Reflectance Differential Spectroscopy
    
    
    Tuesday Evening, July 9th
    
  • EXPLOITING KINETICS AND THERMODYNAMICS

    Chair: Z. Lilienthal-Weber, Lawrence Berkeley Labs, Berkeley, CA
    
    D.J. Eaglesham, AT&T Bell Labs, Murray Hill, New Jersey
    Low Temperature Epitaxy
    
    C.J. Palmstrom, Bellcore, Redbank, NJ
    Growth of Epitaxial Metals on GaAs
    
    
    Wednesday Morning, July 10th
    
  • INTERFACE STRUCTURE

    Chair:  J.M. Gibson, University of Illinois, Urbana
    
    M. Hybertsen, AT&T Bell Labs, Murray Hill
    Interface Strain and Composition in Lattice-matched Heterointerfaces
    
    W.M. Stobbs, University of Cambridge, UK
    Electron Microscopy Techniques for Interface Structuce
    
    A. Bourret, CEN Grenoble, France
    Interface Structure by X-ray Diffraction
    
    
    Wednesday Evening, July 10th
    
  • CHALLENGES IN GROWTH TECHNOLOGY

    Chair: G.L. Turner, MIT Lincoln Labs, Lexington, MA
    
    R. Davis, North Carolina State U., Raleigh
    Initial Stages of Growth of Silicon Carbide and Diamond
    
    A. Gossard, University of California, Santa Barbara
    Growth Challenges Based on the Formation of New Structures
    
    
    Thursday Morning, July 11th
    
  • NEW VIEWS OF INTERFACES

    Chair:  R.D. Bringans,  Xerox PARC, Palo Alto
    
    L.J. Schowalter, Renssalaer Polytechnic Institute, Troy, NY
    Ballistic Electron Spectromicroscopy of Silicide Interfaces
    
    B.E. Tonner, University of Wisconsin, Milwaukee
    Photoemission Microscopy and Holography of Interface Formation
    
    R. Godby, University of Cambridge, UK
    Many-body Effects at Metal-Semiconductor Interfaces
    
    Thursday Evening, July 12th
    
  • SCIENCE FOR FUTURE TECHNOLOGIES

    Chair: H. Kroemer, University of California, Santa Barbara
    
    H. Craighead, Cornell University, Ithaca, NY
    Microscopic Devices and Lithography
    
    J. Woodall, IBM Watson Labs, Yorktown Heights, NY
    Surface Fermi-level Engineering
    
    
    Friday Morning, July 30th
    
  • SUMMARY PANEL DISCUSSION

    Chair:  M. Olmstead, University of Washington, Seattle
    
    Discussion Leaders comprised the Panel