Chair: E.D. Williams, University of Maryland, College Park

J.A. Venables, Arizona State U., Tempe, and U. of Sussex, Brighton, UK 
Nucleation, Growth and Surface Diffusion Processes in Heteroepitaxy

M.G. Lagally, University of Wisconsin, Madison
Scanning Tip Microscocopy of Semiconductor Growth Surfaces

E. Kaxiras, Naval Research Labs, Washington, DC
Strain and Electronic Energies in Growth Initiation
  

Monday Evening, July 8th

Chair: E. Carter, University of California, Los Angeles

G.H. Gilmer, AT&T Bell Labs, Murray Hill, NJ
Molecular Dynamics Simulations of Surface Kinetics

M. Copel, IBM Watson Research Labs, Yorktown Heights, NY
Structure and Surfactants for Group IV heteroepitaxy


Tuesday Morning, July 9th

Chair: M. Zinke-Allmang, University of Western Ontario, London, Ontario

B. Dodson, Sandia National Labs, Albuquerque
Strained-Layer Relaxation Kinetics

P.I. Cohen, University of Minnesota, Minneapolis
Dynamics of MBE Growth- the Role of Defects 

D.E Aspnes, Bellcore, Redbank, NJ
A New Look at OMCVD Growth by Reflectance Differential Spectroscopy


Tuesday Evening, July 9th

Chair: Z. Lilienthal-Weber, Lawrence Berkeley Labs, Berkeley, CA

D.J. Eaglesham, AT&T Bell Labs, Murray Hill, New Jersey
Low Temperature Epitaxy

C.J. Palmstrom, Bellcore, Redbank, NJ
Growth of Epitaxial Metals on GaAs


Wednesday Morning, July 10th

Chair:  J.M. Gibson, University of Illinois, Urbana

M. Hybertsen, AT&T Bell Labs, Murray Hill
Interface Strain and Composition in Lattice-matched Heterointerfaces

W.M. Stobbs, University of Cambridge, UK
Electron Microscopy Techniques for Interface Structuce

A. Bourret, CEN Grenoble, France
Interface Structure by X-ray Diffraction


Wednesday Evening, July 10th

Chair: G.L. Turner, MIT Lincoln Labs, Lexington, MA

R. Davis, North Carolina State U., Raleigh
Initial Stages of Growth of Silicon Carbide and Diamond

A. Gossard, University of California, Santa Barbara
Growth Challenges Based on the Formation of New Structures


Thursday Morning, July 11th

Chair:  R.D. Bringans,  Xerox PARC, Palo Alto

L.J. Schowalter, Renssalaer Polytechnic Institute, Troy, NY
Ballistic Electron Spectromicroscopy of Silicide Interfaces

B.E. Tonner, University of Wisconsin, Milwaukee
Photoemission Microscopy and Holography of Interface Formation

R. Godby, University of Cambridge, UK
Many-body Effects at Metal-Semiconductor Interfaces

Thursday Evening, July 12th

Chair: H. Kroemer, University of California, Santa Barbara

H. Craighead, Cornell University, Ithaca, NY
Microscopic Devices and Lithography

J. Woodall, IBM Watson Labs, Yorktown Heights, NY
Surface Fermi-level Engineering


Friday Morning, July 30th

Chair:  M. Olmstead, University of Washington, Seattle

Discussion Leaders comprised the Panel