Chair: J.A. Venables, Arizona State U., Tempe and U. of Sussex, UK

J. Villain, CEN Grenoble, France 
Roughening during Epitaxial Growth

A. Zangwill, Georgia Institute of Technology, Atlanta
Equilibrium and Non-equilibrium Aspects of Epitaxial Strain Relief

B.G. Orr, U. Michigan, Ann Arbor
Morphological Evolution of Epitaxial Films
  

Monday Evening, July 26th

Chair: D.J. Eaglesham, AT&T Bell Labs, Murray Hill, New Jersey

J.H. van der Merwe, University of South Africa, Pretoria, South Africa
Growth Modes in Epitaxy

H.J. Osten, Institute for Semiconductor Physics, Franfurt/Oder, Germany
Surfactants in Epitaxial Growth


Tuesday Morning, July 27th

Chair: W.A. Jesser, University of Virginia, Charlottesville

R.K. Bullough, Harwell Laboratory, UK
What do we Mean by Critical Thickness?

K. Maeda, University of Tokyo, Japan
Microscopic Mechanism of Dislocation Glide in 
Semiconductor Thin Films

W. Schroter, University of Gottingen, Germany
Electrical Properties of Dislocations


Tuesday Evening, July 27th

Chair: G.A. Rozgonyi, North Carolina State U., Raleigh

J. Sturm, Princeton U., Princeton, New Jersey
Materials issues in Si-based Devices

H. Temkin, Colorado State University, Fort Collins
Materials Issues in Optoelectronic Devices


Wednesday Morning, July 28th

Chair:  L.C. Feldman,  AT&T Bell Labs, Murray Hill, New Jersey

H.J. Gossmann, AT&T Bell Labs, Murray Hill
Delta-Doped Structures in Si and Dopant-Defect Interactions

K.J. van Oostrom, Philips Research Labs, Eindhoven, Holland
Diffusion of Dopants

K. Ploog, Paul Drude Institute, Berlin, Germany
New Challenges for Delta-Doping of GaAs


Wednesday Evening, July 28th

Chair: J.D. Tersoff, IBM Watson Labs, Yorktown Heights, NY

D. Srivastava, Pennsylvania State U., University Park
Prospects for Molecular Dynamics Simulations of Epitaxial Growth

R. Jones, University of Exeter, UK
Structure and Properties of Disloactions in Semiconductors


Thursday Morning, July 29th

Chair:  D.K. Biegelsen,  Xerox PARC, Palo Alto

S. Hosoki, Hitachi Central Research Labs, Tokyo, Japan
Dynamic Observations of Epitaxial Growth on Si(111) by STM

R.M. Tromp, IBM Watson Labs, Yorktown Height, NY
In-situ LEEM studies of Crystal Growth

P.H. Fuoss, AT&T Bell Labs, Murray Hill, New Jersey
In-situ X-ray Observations of Epitaxial Growth

Thursday Evening, July 29th

Chair: E.R. Weber, University of California, Berkeley

R. Martin, University of Illinois, Urbana
How Much Longer Will Experimentalists be Needed?

D. DeFontaine, University of California, Berkeley
Electronic Strucure Calculations - a New Calorimeter?


Friday Morning, July 30th

Chair:  Z. Lilliental-Weber, Lawrence Berkeley Labs, California

F.K. LeGoues, IBM Watson Labs, Yorktown Heights, NY
Ordering in SiGe: the Search for Consensus

D.E. Jesson, Oak Ridge National Lab, Tennessee
Ordering in Ultra-Thin SiGe Superlattices and Alloys