This file contains the program of the 1993 Gordon Conference on

EPITAXIAL THIN FILMS AND INTERFACES

Colby Sawyer College, New Hampshire, USA.

  • July 26th-30th, 1993

  • Chair, Robert Hull; Vice-Chair, J. Murray Gibson


  • Sunday Evening, July 25th, Welcome reception, registration
    Monday Morning, July 26th
  • EQUILIBRIUM AND NON-EQUILIBRIUM THERMODYNAMICS

    Chair: J.A. Venables, Arizona State U., Tempe and U. of Sussex, UK
    
    J. Villain, CEN Grenoble, France 
    Roughening during Epitaxial Growth
    
    A. Zangwill, Georgia Institute of Technology, Atlanta
    Equilibrium and Non-equilibrium Aspects of Epitaxial Strain Relief
    
    B.G. Orr, U. Michigan, Ann Arbor
    Morphological Evolution of Epitaxial Films
      
    
    Monday Evening, July 26th
    
  • EPITAXIAL GROWTH MODES

    Chair: D.J. Eaglesham, AT&T Bell Labs, Murray Hill, New Jersey
    
    J.H. van der Merwe, University of South Africa, Pretoria, South Africa
    Growth Modes in Epitaxy
    
    H.J. Osten, Institute for Semiconductor Physics, Franfurt/Oder, Germany
    Surfactants in Epitaxial Growth
    
    
    Tuesday Morning, July 27th
    
  • MISFIT DISLOCATIONS IN STRAINED FILMS

    Chair: W.A. Jesser, University of Virginia, Charlottesville
    
    R.K. Bullough, Harwell Laboratory, UK
    What do we Mean by Critical Thickness?
    
    K. Maeda, University of Tokyo, Japan
    Microscopic Mechanism of Dislocation Glide in 
    Semiconductor Thin Films
    
    W. Schroter, University of Gottingen, Germany
    Electrical Properties of Dislocations
    
    
    Tuesday Evening, July 27th
    
  • MATERIALS ISSUES IN EPITAXIAL DEVICES

    Chair: G.A. Rozgonyi, North Carolina State U., Raleigh
    
    J. Sturm, Princeton U., Princeton, New Jersey
    Materials issues in Si-based Devices
    
    H. Temkin, Colorado State University, Fort Collins
    Materials Issues in Optoelectronic Devices
    
    
    Wednesday Morning, July 28th
    
  • ATOMIC SCALE CONTROL OF DOPANTS AND POINT DEFECTS

    Chair:  L.C. Feldman,  AT&T Bell Labs, Murray Hill, New Jersey
    
    H.J. Gossmann, AT&T Bell Labs, Murray Hill
    Delta-Doped Structures in Si and Dopant-Defect Interactions
    
    K.J. van Oostrom, Philips Research Labs, Eindhoven, Holland
    Diffusion of Dopants
    
    K. Ploog, Paul Drude Institute, Berlin, Germany
    New Challenges for Delta-Doping of GaAs
    
    
    Wednesday Evening, July 28th
    
  • REALISTIC SIMULATION OF EPITAXIAL GROWTH AND DEFECTS

    Chair: J.D. Tersoff, IBM Watson Labs, Yorktown Heights, NY
    
    D. Srivastava, Pennsylvania State U., University Park
    Prospects for Molecular Dynamics Simulations of Epitaxial Growth
    
    R. Jones, University of Exeter, UK
    Structure and Properties of Disloactions in Semiconductors
    
    
    Thursday Morning, July 29th
    
  • IN-SITU PROBES OF EPITAXIAL GROWTH

    Chair:  D.K. Biegelsen,  Xerox PARC, Palo Alto
    
    S. Hosoki, Hitachi Central Research Labs, Tokyo, Japan
    Dynamic Observations of Epitaxial Growth on Si(111) by STM
    
    R.M. Tromp, IBM Watson Labs, Yorktown Height, NY
    In-situ LEEM studies of Crystal Growth
    
    P.H. Fuoss, AT&T Bell Labs, Murray Hill, New Jersey
    In-situ X-ray Observations of Epitaxial Growth
    
    Thursday Evening, July 29th
    
  • MATERIALS SCIENCE WITHOUT A LABORATORY

    Chair: E.R. Weber, University of California, Berkeley
    
    R. Martin, University of Illinois, Urbana
    How Much Longer Will Experimentalists be Needed?
    
    D. DeFontaine, University of California, Berkeley
    Electronic Strucure Calculations - a New Calorimeter?
    
    
    Friday Morning, July 30th
    
  • ORDERING IN SiGe ALLOYS

    Chair:  Z. Lilliental-Weber, Lawrence Berkeley Labs, California
    
    F.K. LeGoues, IBM Watson Labs, Yorktown Heights, NY
    Ordering in SiGe: the Search for Consensus
    
    D.E. Jesson, Oak Ridge National Lab, Tennessee
    Ordering in Ultra-Thin SiGe Superlattices and Alloys
    
    
  • FINAL DISCUSSION SESSION