This file contains the program of the 1995 Gordon Conference on

EPITAXIAL THIN FILMS AND INTERFACES

Plymouth State College (South), New Hampshire, USA.

  • July 10th-14th, 1995

  • Chair, J. Murray Gibson; Vice-Chair, John A. Venables


  • Sunday Evening, July 9th Welcome reception, registration
    Monday Morning, July 10th
  • SEMICONDUCTOR EPITAXY

    Chair: D. Biegelsen, Xerox, Palo Alto
    
    A.G. Cullis, DRA Malvern, UK 
    Growth Instabilities of Strained Layer Epitaxy
    
    S. Yalisove, U. Michigan, Ann Arbor
    Low Temperature Growth of Si
    
    D.D. Vvedensky, Imperial College, London, UK
    Modelling of Growth and Etching of Semiconductors
      
    
    Monday Evening, July 10th
    
  • EPITAXY of NON-SEMICONDUCTORS

    Chair: K. Kavanagh, U. California, San Diego
    
    B. Heinrich, Simon Fraser U., Vancouver, Canada
    The Growth of Metallic Magnetic Structures
    
    D. Lorretto, Lawrence Berkeley Lab, California
    Calcium Fluoride on Silicon
    
    
    Tuesday Morning, July 11th
    
  • NUCLEATION OF THIN FILMS

    Chair: J.G. Amar, Emory U., Atlanta
    
    G.S. Bales, Sandia Labs, Livermore
    Dynamics of 2D Island Growth during Sub-Monolayer Epitaxy
    
    R.J. Behm, U. Ulm, Ulm, Germany
    STM Studies of Metal Hetero-Epitaxy
    
    K.W. Jacobsen, Technical U. of Denmark, Copenhagen, Denmark
    Atomistic Modelling of Metal Growth
    
    
    Tuesday Evening, July 11th
    
  • DEFECTS AND DISLOCATIONS IN THIN FILMS

    Chair: D. Cherns, U. Bristol, Bristol, UK
    
    D. Perovic, U. Toronto, Toronto, Canada
    Dislocations in Epitaxial Films
    
    P. Mooney, IBM Watson Labs, Yorktown Heights
    Nucleation of Dislocations in SiGe
    
    
    Wednesday Morning, July 12th
    
  • DIFFUSION AND SEGREGATION IN EPITAXIAL THIN FILMS

    Chair:  H. Gossmann,  AT&T Bell Labs, Murray Hill
    
    T.C. Chiang, U. Illinois, Urbana
    Ge/Si Growth by MBE and CVD
    
    D. Godbey, Naval  Research Labs, Washington, DC
    Ge Segregation at SiGe Interfaces
    
    F. Spaepen, Harvard U., Cambridge, Mass
    Strain and Diffusion in Epitaxy
    
    
    Wednesday Evening, July 12th
    
  • ELECTRICAL PROPERTIES OF EPITAXIAL THIN FILMS

    Chair: L.J. Showalter, RPI, Troy, NY
    
    H.v. Kanel, ETH, Zurich, Switzerland
    Electrical Properties of Interfacial Dislocations
    
    K. Nakagawa, Hitachi Central Research Labs, Tokyo, Japan
    Electrical Devices with Heteroepitaxial Layers on Si
    
    
    Thursday Morning, July 13th
    
  • FROM MONOLAYERS TO MULTILAYERS

    Chair:  B. Orr,  U. Michigan, Ann Arbor
    
    K. Kern, ETH, Lausanne, Switzerland
    Pattern Formation in Epitaxial Growth
    
    J.W. Evans, Ames Lab,  Ames, Iowa
    Transition to Multilayer Kinetic Roughening
    
    D.E. Savage, U. Wisconsin, Madison
    STM and X-ray Studies of Si, Ge and SiGe Mono- and Multi-layers
    
    
    Thursday Evening, July 13th
    
  • INHOMOGENEOUS INTERFACES

    Chair: M. Henzler, Hannover, Germany
    
    E. Chason, Sandia Labs, Albuquerque
    Roughness Evolution during Etching and Growth
    
    M. Yoo, AT&T Bell Labs, Murray Hill
    Microscopic Optical Study of Homogeneity of AlGaAs Layers
    
    
    Friday Morning, July 14th
    
  • EPITAXY OF III-V COMPOUNDS

    Chair:  J. Tersoff, IBM  Watson Labs, Yorktown Heights
    
    A. Madhukar, USC, Los Angeles
    Island Formation during III-V Epitaxy
    
    G.M. Ribiero, UCSB, Santa Barbara
    Growth, Optical and Transport Properties of Self Assembled Quatum Dots
    
    Friday Morning, July 14th 
    
  • FINAL DISCUSSION SESSION

    Chair: R. Hull, U. Virginia, Charlottesville