This file contains the program of the 1995 Gordon Conference on

EPITAXIAL THIN FILMS AND INTERFACES

Plymouth State College (South), New Hampshire, USA.

  • July 10th-14th, 1995

  • Chair, J. Murray Gibson; Vice-Chair, John A. Venables

    • Sunday Evening, July 9th Welcome reception, registration
    Monday Morning, July 10th
  • SEMICONDUCTOR EPITAXY

    Chair: D. Biegelsen, Xerox, Palo Alto

A.G. Cullis, DRA Malvern, UK 
Growth Instabilities of Strained Layer Epitaxy

S. Yalisove, U. Michigan, Ann Arbor
Low Temperature Growth of Si

D.D. Vvedensky, Imperial College, London, UK
Modelling of Growth and Etching of Semiconductors
  

Monday Evening, July 10th
  • EPITAXY of NON-SEMICONDUCTORS

    Chair: K. Kavanagh, U. California, San Diego

B. Heinrich, Simon Fraser U., Vancouver, Canada
The Growth of Metallic Magnetic Structures

D. Lorretto, Lawrence Berkeley Lab, California
Calcium Fluoride on Silicon


Tuesday Morning, July 11th
  • NUCLEATION OF THIN FILMS

    Chair: J.G. Amar, Emory U., Atlanta

G.S. Bales, Sandia Labs, Livermore
Dynamics of 2D Island Growth during Sub-Monolayer Epitaxy

R.J. Behm, U. Ulm, Ulm, Germany
STM Studies of Metal Hetero-Epitaxy

K.W. Jacobsen, Technical U. of Denmark, Copenhagen, Denmark
Atomistic Modelling of Metal Growth


Tuesday Evening, July 11th
  • DEFECTS AND DISLOCATIONS IN THIN FILMS

    Chair: D. Cherns, U. Bristol, Bristol, UK

D. Perovic, U. Toronto, Toronto, Canada
Dislocations in Epitaxial Films

P. Mooney, IBM Watson Labs, Yorktown Heights
Nucleation of Dislocations in SiGe


Wednesday Morning, July 12th
  • DIFFUSION AND SEGREGATION IN EPITAXIAL THIN FILMS

    Chair:  H. Gossmann,  AT&T Bell Labs, Murray Hill

T.C. Chiang, U. Illinois, Urbana
Ge/Si Growth by MBE and CVD

D. Godbey, Naval  Research Labs, Washington, DC
Ge Segregation at SiGe Interfaces

F. Spaepen, Harvard U., Cambridge, Mass
Strain and Diffusion in Epitaxy


Wednesday Evening, July 12th
  • ELECTRICAL PROPERTIES OF EPITAXIAL THIN FILMS

    Chair: L.J. Showalter, RPI, Troy, NY

H.v. Kanel, ETH, Zurich, Switzerland
Electrical Properties of Interfacial Dislocations

K. Nakagawa, Hitachi Central Research Labs, Tokyo, Japan
Electrical Devices with Heteroepitaxial Layers on Si


Thursday Morning, July 13th
  • FROM MONOLAYERS TO MULTILAYERS

    Chair:  B. Orr,  U. Michigan, Ann Arbor

K. Kern, ETH, Lausanne, Switzerland
Pattern Formation in Epitaxial Growth

J.W. Evans, Ames Lab,  Ames, Iowa
Transition to Multilayer Kinetic Roughening

D.E. Savage, U. Wisconsin, Madison
STM and X-ray Studies of Si, Ge and SiGe Mono- and Multi-layers


Thursday Evening, July 13th
  • INHOMOGENEOUS INTERFACES

    Chair: M. Henzler, Hannover, Germany

E. Chason, Sandia Labs, Albuquerque
Roughness Evolution during Etching and Growth

M. Yoo, AT&T Bell Labs, Murray Hill
Microscopic Optical Study of Homogeneity of AlGaAs Layers


Friday Morning, July 14th
  • EPITAXY OF III-V COMPOUNDS

    Chair:  J. Tersoff, IBM  Watson Labs, Yorktown Heights

A. Madhukar, USC, Los Angeles
Island Formation during III-V Epitaxy

G.M. Ribiero, UCSB, Santa Barbara
Growth, Optical and Transport Properties of Self Assembled Quatum Dots

Friday Morning, July 14th
  • FINAL DISCUSSION SESSION

    Chair: R. Hull, U. Virginia, Charlottesville