Gordon Conference
This is a list of Accepted Speakers/ Discussion Leaders at the 2001 Gordon Conference on


Accepted Speakers and Discussion Leaders

The alphabetic list of accepted speakers, with approximate titles, is given below. Please note that this list is in development, it is NOT complete. A Poster is available in pdf format, which can be downloaded.

Joanna Aizenberg, Bell-Lucent Labs, New Jersey 
Discussion Leader

P.A. Bennett, Arizona State University, Tempe
Surface kinetics of reactive epitaxial growth of silicides

P.V. Braun, University of Illinois, Urbana-Champaign
Nano-patterned colloidal deposition

W. Braun, Paul Drude Institut, Berlin, Germany
Shape evolution during overgrowth on structured substrates
H. Brune, EPFL, Lausanne, Switzerland
Discussion Leader

J.J. DeYoreo, Lawrence Livermore National Lab., California
Sea shells, viruses and chocolate bars: an overview of 
dynamics at the crystal/solution interface

J.J. Derby, Unniversity of Minnesota, Minneapolis
Hydrodyamics of KDP growth from solution

G. Ehrlich, University of Illinois, Urbana-Champaign
Diffusion, interactions, and growth on crystals: 
an atom-by-atom view

L.E. Feldman, Vanderbilt University, Tennessee
The organic semiconductor/dielectric/metal interface

P.J. Feibelman, Sandia National Lab, Albuquerque, NM
Discussion Leader

S. Hasegawa, University of Tokyo, Japan
Electrical conductivity of thin metal layers on Si

F.J. Himpsel, University of Wisconsin, Madison
Self-assembly of organic and inorganic nanostructures 
on silicon

Melissa Hines, Cornell University, Ithaca, NY               
Silicon etching: from atomic-scale chemical reactions 
to macroscopic morphologies

D. Kandel, Weizmann Institute, Israel
A new approach to continuum modeling of thin film 
morphological evolution

G.L. Kellogg, Sandia National Lab, Albuquerque, NM
The evolution of self-assembled domain structures: 
Pb on Cu(111)

P. Kratzer, Fritz Haber Institut Berlin, Germany
From DFT studies to growth simulations: Modeling 
molecular beam epitaxy of GaAs

T.M. Lu, Rensselaer Polytechnic Institute, Troy, NY
Discussion Leader

F.J. Meyer zu Heringdorf, IBM Yorktown Heights, New York
Pentacene film growth

T. Michely, RWTH Aachen, Germany
Coarsening mechanisms in surface morphological evolution

J. Nogami, Michigan State University, East Lansing
Rare Earth silicide nanowires on silicon surfaces

Christine Orme, Lawrence Livermore National Lab., California
Probing crystal growth using chiral molecules

J.P. Pelz, Ohio State University, Columbus 
Discussion Leader

C. Ratsch, Univerity of California, Los Angeles
Discussion Leader

P. Reynders, Merck, Darmstadt, Germany
Novel industrial pigments with special optical effects

S.J. Sibener, Univerity of Chicago, Illinois
Discussion Leader

P. Vekilov, University of Alabama, Hunstville
Molecular-level parameters for the self-assembly of 
biological macromolecules into crystals

J.A. Venables, Arizona State University, Tempe
Discussion Leader

S. Weiner, Weizmann Institute, Israel
Biomineralization: control over calcium carbonate formation

P. Yang, Univerity of California, Berkeley
Rational growth of inorganic nanowires

If you wish to attend a Gordon Research Conference, you must apply (you can apply online) to the Gordon Conference organization as a first step towards registering. Alternatively details may be obtained by mail from the Gordon Conference Office: Gordon Research Conferences, University of Rhode Island, P.O. Box 984, West Kingston, RI 02892-0984, USA. Phone: (401) 783-4011/3372; FAX 783-7644. The Gordon Research Conference home page is at http://www.grc.uri.edu/ and E-mail address: grc@grcmail.grc.uri.edu

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Latest version of this document: 27th March 2001.