Notes by John A. Venables. This table is in the course of construction. Latest version 7 January 97.
Material spacing (nm) Energy (eV) LO freq (THz)
1. Bulk Si calc 0.545 (lattice 15.2
expt 0.5430 constant) 4.63 ± 0.04 15.5
error <1% <3%
2. Si2 calc 0.226 (dimer 14.6
expt 0.225 separation)3.21 ± 0.13 15.4
3. Bulk Ge calc
expt 0.5658 3.83 ± 0.02
error
4. Ge2 calc
expt 2.63 ± 0.09
The argument is that if one gets both bulk Si (Ge) and the dimer Si2 (Ge2) correct, then surfaces, which are in between, must be more or less right. These particular calculations (Northrup, ref to find) gave the surface energy of 1.46 eV/atom for un-reconstructed Si(111) 1x1, and *** for Ge(111) 1x1.