Publications 1990-1999

John Venables' Publications 1990-1999




I 184   Studies of surface diffusion and crystal growth by SEM and STEM,
	NATO-ARW on Kinetics of ordering and growth on surfaces 
	(Plenum, 1990) 437-453 
	(J.A. Venables, T. Doust, J.S. Drucker and M. Krishnamurthy).

	Items 185-189 in Proc 12th Intl. Congress for Electron
	Microscopy (Seattle, 1990)

I 185   Electron spectroscopy in SEM and STEM, 2, 378-9 
	(J.A. Venables, G.G. Hembree and C.J. Harland).

  186   Secondary and Auger electron spectroscopy and energy-selected 
	imaging in a UHV-STEM, 2, 382-3 
	(G.G. Hembree, F.C.H. Luo and J.A. Venables). Expanded version 
	published in proceedings of the Microsbeam Analysis Society (1990).

  187   Studies of Ge/Si(100) and observation of atomic steps on Si(100) 
	using biassed secondary electron imaging in a UHV-STEM, 1, 308-9 
	(M. Krishamurthy, J.S. Drucker and J.A. Venables).

  188   Variations in secondary electron emission from MgO characterized 
	by secondary electron spectroscopy, 1, 336-7 (J. Liu, P.A. Crozier,
	G.G. Hembree, F.C.H. Luo, J.M. Cowley and J.A. Venables).

  189   Angular-resolved electron spectroscopy with parallel recording, 
	2, 370-1 (Huang Min, P.S. Flora, C.J. Harland and J.A. Venables).
	Expanded version published in proceedings of the Microbeam 
	Analysis Soc. (1990).

I 190   Nucleation and growth mechanisms in hetero-epitaxial films, 
	Proc MRS Symposium 198 (1990) 93-104 (J.A. Venables, 
	J.S. Drucker, M. Krishnamurthy, G. Raynerd and T. Doust).

  191   Heteroepitaxy of Ge on vicinal Si(100), Proc MRS Symposium 198 
	(1990) 409-414 (M. Krishnamurthy, J.S. Drucker and J.A. Venables).

  192   Energies controlling nucleation and growth processes: the case of 
	Ag/W(110), Phys. Rev. Lett. 65 (1990) 3317-3320
	(G.W. Jones, J.M. Marcano, J.K. Norskov and J.A. Venables).

  193   Diffraction Profiles of xenon on graphite. Phys. Rev. B43 (1991)
	3208-3214 (M. Hamichi, R. Kariotis and J.A. Venables).

  194   Auger electron spectroscopy and microscopy with probe-size limited 
	resolution, Appl. Phys. Lett. 58 (1991) 1890-2 (G.G. Hembree, J.S.
	Drucker, F.C.H. Luo, M. Krishnamurthy and J.A. Venables).

  195   Initial growth of Ag/Si(100) studied with high spatial resolution 
	AES and SEM, Proc. MRS Symposium 202 (1991) 49-54 
	(F.C.H. Luo, G.G. Hembree and J.A. Venables).

  196   Nanometer resolution studies of microstructural evolution during 
	the heteroepitaxy of Ge on vicinal Si(100), Proc. MRS Symposium 
	202 (1991) 77-82 (M. Krishnamurthy, J.S. Drucker and J.A. Venables).

  197   Microstructural evolution during the heteroepitaxy of Ge on vicinal
	Si(100), J. Appl. Phys. 69 (1991) 6461-6471 
	(M. Krishanmurthy, J.S. Drucker and J.A. Venables).

	Items 198-200 are in Proc. 49th EMSA Meeting (1991)

I 198   Auger electron spectroscopy and microscopy in STEM, 464-5 
	(G.G. Hembree, F.C.H. Luo and J.A. Venables).

  199   Imaging bulk insulators with secondary electrons in an UHV STEM,
	662-3 (J.Liu, G.G. Hembree and J.A. Venables).

  200   High resolution Auger electron microscopy and spectroscopy of
	supported metal particles, 690-1 
	(J.Liu, G.G. Hembree, G. Spinnler and J.A. Venables).

	Items 201-203 are in Proc. EMAG '91, IoP Conf Series 119 (1991)

I 201   Secondary and Auger electron imaging in UHV-SEM and STEM, 33-38 
	(J.A. Venables and G.G. Hembree).

  202   Angular resolved electron spectroscopy of Ag/Si(111) and 
	Ag/Ge(111) 147-150 ( M. Huang, E. Hofmann, P. Stenstrom, 
	C.J. Harland and J.A. Venables).

  203   Studies of Ag/Ge(111) using biassed secondary electron imaging,
	177-180 (F.L. Metcalfe, G. Raynerd and J.A. Venables).

  204   Temperature dependent coverage of the root3 x root3 structure 
	of Ag/Si(111), Phys. Rev. B44 (1991) 13803-6 
	(G.Raynerd, M. Hardiman and J.A. Venables).



  205   Competing processes and controlling energies at the Ag/Si(111)
	interface, Surface Sci. 261 (1992) 251-266 
	(G. Raynerd, T.N. Doust and J.A. Venables).

  206   High resolution Auger electron spectroscopy and microscopy of a
	supported metal catalyst, Surface Sci. 262 (1992) L111-114 
	(J.Liu, G.G. Hembree, G.Spinnler and J.A. Venables).

  207   Nanometer resolution scanning Auger electron microscopy,
	Ultramicroscopy 49 (1992) 109-120 
	(G.G. Hembree and J.A. Venables).

  208   High resolution Auger electron imaging of supported metal 
	particles, Catalysis Letters 15 (1992) 133-143
	(J.Liu, G.G. Hembree, G. Spinnler and J.A. Venables).

  208   Imaging small metal particles with Auger electrons,
	Proc. EMSA 50 (1992) 308-9
	(J.Liu, G.G. Hembree, G.E. Spinnler and J.A. Venables).

I 209   Atomic processes in silicon hetero-epitaxy, Proc. MRS Symposium 
	263 (1992) 3-8 (J.A. Venables, J.S. Drucker and G. Raynerd).

I 210   Surface studies in UHV-SEM and STEM, Proc. ICXOM-92 (IoP Conf.
	Ser. 130 (1993) 415-422 (J.A. Venables, G.G. Hembree, J.Liu,
	J.S. Drucker, M. Huang, F.L. Metcalfe and R.H. Milne).

I 211   Surface studies in UHV-SEM and STEM, J. Microscopy 170 (1993)
	193-199 (R.H. Milne, G.G. Hembree, J.S. Drucker, C.J. Harland
	and J.A. Venables).

  212   Development of an angle resolving electron spectrometer, 
	Surf. Int. Anal. 20 (1993) 666-674 
	(M. Huang, C.J. Harland and J.A. Venables).

  213   Some comparisons af Ag deposits on Ge and Si(111), Proc. MRS 
	Symposium 280 (1993) 55-58 ( F.L. Metcalfe and J.A. Venables).

	Items 214 and 215 are in Proc. EMAG '93 (IoP Conf Ser 138, 1993)

  214   THEED of sub-monolayer phases of xenon adsorbed on graphite, 
	221-224 (T.E.A. Zerrouk, M. Hamichi, R.H. Milne, 
	J.D.H. Pilkington and J.A. Venables).

  215   Biassed secondary electron microscopy of Cs/Si(100), 197-200 
	(M. Azim, R.H. Milne, R. Persaud and J.A. Venables).

  216   Nanometer-resolution surface analysis with Auger electrons,
	Ultramicroscopy 52 (1993) 369-376 
	(J.Liu, G.G. Hembree, G.E. Spinnler and J.A. Venables).

  217   Caesium an Si(100) studied by biassed secondary electron 
	microscopy, Scanning Microscopy 7 (1993) 1153-60 (M.Azim, 
	C.J. Harland, T.J. Martin, R.H. Milne and J.A. Venables).



I 218   Atomic processes in crystal growth, Surf. Sci. 299/300 (1994) 
	798-817 (J.A. Venables, invited paper for 30th anniversary volumes).

  219   Coupled diffusion equation solutions to Ag/Ge(111) and Cs/Si(100)
	interactions, Proc. MRS Symposium 317 (1994) 83-87 (J.A. Venables, 
	R. Persaud, F.L. Metcalfe, R.H. Milne and M. Azim).

I 220   Advances in Auger electron spectroscopy and imaging,
	ICEM-13, Paris, 1 (1994) 759-762 (J.A. Venables, G.G. Hembree, 
	J. Liu, C.J. Harland and M. Huang).

  221   Surface processes at the Ag/Fe(110) interface ICEM-13, Paris,
	2 (1994) 1021-2 (H. Noro, R. Persaud and J.A. Venables).

I 222   Electron diffraction in UHV SEM, REM and TEM, Proc. 50th
	MSA Meeting, New Orleans, (1994) 594-5 (J.A. Venables, C.J. Harland, 
	P.A. Bennett and T.E.A. Zerrouk).

  223   Observation of solid-hexatic-liquid phase transitions of 
	sub-monolayer xenon on graphite by transmission electron 
	diffraction, Phys. Rev. B50 (1994) 8946-49
	(T.E.A. Zerrouk, M.Hamichi, J.D.H. Pilkington and J.A. Venables).

I 224   Rate and diffusion equation analyses of surface processes
	J. Phys. Chem. Solids 55 (1994) 955-964 (R.W. Balluffi Fest)
	(J.A. Venables, R. Persaud, F.L. Metcalfe, R.H. Milne and M. Azim).

  225   Linear diffusion profiles due to long range adsorbate 
	interactions: Cs/Si(100), Phys. Rev. Lett 73 (1994) 1396-99
	(R.H. Milne, M.Azim, R. Persaud and J.A. Venables).

I 226   Mechanisms of thin film growth, invited talks/ extended abstract
	for Summer Schools at Chlum, Czech Republic, and Helsinge, Denmark
	July-August, 1994, published in Growth and applications of thin
	films, eds L. Eckertova and T. Rusicka, Prometheus Publishing,
	Prague, Czech Republic (1994) 1-4 (J.A. Venables).

I 227   Recent surface studies using biassed secondary electron imaging
	Scanning Microscopy, 8 (1994) 803-812 (R. Persaud, H. Noro, M. Azim, 
	R.H. Milne and J.A. Venables) invited talk given by R. Persaud.

  228   Growth and diffusion of Ag on Fe(110), Vacuum 46 (1995) 1173-1176
	(H. Noro, R. Persaud and J.A. Venables)

  229   Quantitative AES analysis of Ge surface segregation in 
	Si/Ge/Si(100) heterostructures, Appl. Phys. Lett. 67 (1995) 
	276-278 (Y. Li, G.G. Hembree and J.A. Venables)

  230   Surface diffusion of Cs on Si(100)2x1, Surface Sci. 336 (1995) 
	63-75 (R.H. Milne, M. Azim, R. Persaud and J.A. Venables)


 
  231   Auger layer growth calculations for A/B/A heterostructures, 
	J. Phys. D29 (1996) 240-245 (J.A. Venables, Y. Li, G.G. Hembree, 
	H. Noro and R. Persaud); see ref 240 for update.  

  232   Growth of nanometer-size metallic particles on CaF2(111),
	J. Appl. Phys. 80 (1996) 1161-1170 (K.R. Heim, S.T. Coyle, 
	G.G. Hembree, J.A. Venables and M.R. Scheinfein)

  233   Interdiffusion during the growth of Fe on Ag/Fe(110), 
	Materials Res. Soc. 399 (1996) 207-212 (R. Persaud, H. Noro and 
	J.A. Venables)

  234   Surface diffusion of Ag on Fe(110), Surface Sci. 357/358 (1996)
	879-884 (H. Noro, R. Persaud and J.A. Venables)

  235   Comparisons of Ag deposits on Ge and Si(111), Surface Sci. 369
	(1996) 99-107 (F.L. Metcalfe and J.A. Venables)

  236   Competing processes and controlling energies at the Ag/Ge(111) 
	interface, Surface Sci. 371 (1997) 420-430 
	(J.A. Venables, F.L. Metcalfe and A. Sugawara)

I 237   Nucleation, growth and pattern formation in heteroepitaxy
	Physica A239 (1997) 35-46 (J.A. Venables)

B 238	Surface processes in epitaxial growth; Chapter 1 of Growth and
	properties of ultrathin epitaxial layers eds D.A. King and 
	D.P. Woodruff (Elsevier, 1997) p1-45 (J.A. Venables)

I 239   Nucleation on defects in heteroepitaxy
	Materials Res. Soc. 440 (1997) 129-140 (J.A. Venables)

  240	Auger layer growth calculations for A/B/A heterostructures:
	Correction and Comment, J. Phys. D30 (1997) 3163-5
	(J.A. Venables and R. Persaud)  


  241	Structure and intermixing in Fe/Fe(110) and Fe/Ag/Fe(110) 
	multilayers, Surface Sci. 401 (1998) 12-21
 	(R. Persaud, H. Noro and J.A. Venables)  

  242	Predicting nucleation and growth processes: atomistic 
	modelling of metal atoms on ionic substrates, Phys. Rev. B57
	(1998) 6715-6719 (J.H. Harding, A.M. Stoneham and J.A. Venables) 

  243	Graduate education on the internet, Physics Education 33 (1998) 
	157-163 (J.A. Venables)
  
  244	Specialist graduate education using the web, J. Materials 
	Education 20 (1998) 57-63 (J.A. Venables)

B 245	Atomic interactions and surface processes in heteroepitaxy; 
	Chapter 1 of Heteroepitaxy:thin film systems, eds W.K. Liu 
	and M.B. Santos (World Scientific, 1999) 1-63 (J.A. Venables)

I 246	Nucleation and growth of supported metal clusters at defect sites on
	MgO and NaCl(001) surfaces: the cases of Pd and Ag, Materials Res. 
	Soc. 570 (1999) 51-60 (J.A. Venables, G. Haas, H. Brune and J.H. Harding)