Publications 1990-1999
John Venables' Publications 1990-1999
I 184 Studies of surface diffusion and crystal growth by SEM and STEM,
NATO-ARW on Kinetics of ordering and growth on surfaces
(Plenum, 1990) 437-453
(J.A. Venables, T. Doust, J.S. Drucker and M. Krishnamurthy).
Items 185-189 in Proc 12th Intl. Congress for Electron
Microscopy (Seattle, 1990)
I 185 Electron spectroscopy in SEM and STEM, 2, 378-9
(J.A. Venables, G.G. Hembree and C.J. Harland).
186 Secondary and Auger electron spectroscopy and energy-selected
imaging in a UHV-STEM, 2, 382-3
(G.G. Hembree, F.C.H. Luo and J.A. Venables). Expanded version
published in proceedings of the Microsbeam Analysis Society (1990).
187 Studies of Ge/Si(100) and observation of atomic steps on Si(100)
using biassed secondary electron imaging in a UHV-STEM, 1, 308-9
(M. Krishamurthy, J.S. Drucker and J.A. Venables).
188 Variations in secondary electron emission from MgO characterized
by secondary electron spectroscopy, 1, 336-7 (J. Liu, P.A. Crozier,
G.G. Hembree, F.C.H. Luo, J.M. Cowley and J.A. Venables).
189 Angular-resolved electron spectroscopy with parallel recording,
2, 370-1 (Huang Min, P.S. Flora, C.J. Harland and J.A. Venables).
Expanded version published in proceedings of the Microbeam
Analysis Soc. (1990).
I 190 Nucleation and growth mechanisms in hetero-epitaxial films,
Proc MRS Symposium 198 (1990) 93-104 (J.A. Venables,
J.S. Drucker, M. Krishnamurthy, G. Raynerd and T. Doust).
191 Heteroepitaxy of Ge on vicinal Si(100), Proc MRS Symposium 198
(1990) 409-414 (M. Krishnamurthy, J.S. Drucker and J.A. Venables).
192 Energies controlling nucleation and growth processes: the case of
Ag/W(110), Phys. Rev. Lett. 65 (1990) 3317-3320
(G.W. Jones, J.M. Marcano, J.K. Norskov and J.A. Venables).
193 Diffraction Profiles of xenon on graphite. Phys. Rev. B43 (1991)
3208-3214 (M. Hamichi, R. Kariotis and J.A. Venables).
194 Auger electron spectroscopy and microscopy with probe-size limited
resolution, Appl. Phys. Lett. 58 (1991) 1890-2 (G.G. Hembree, J.S.
Drucker, F.C.H. Luo, M. Krishnamurthy and J.A. Venables).
195 Initial growth of Ag/Si(100) studied with high spatial resolution
AES and SEM, Proc. MRS Symposium 202 (1991) 49-54
(F.C.H. Luo, G.G. Hembree and J.A. Venables).
196 Nanometer resolution studies of microstructural evolution during
the heteroepitaxy of Ge on vicinal Si(100), Proc. MRS Symposium
202 (1991) 77-82 (M. Krishnamurthy, J.S. Drucker and J.A. Venables).
197 Microstructural evolution during the heteroepitaxy of Ge on vicinal
Si(100), J. Appl. Phys. 69 (1991) 6461-6471
(M. Krishanmurthy, J.S. Drucker and J.A. Venables).
Items 198-200 are in Proc. 49th EMSA Meeting (1991)
I 198 Auger electron spectroscopy and microscopy in STEM, 464-5
(G.G. Hembree, F.C.H. Luo and J.A. Venables).
199 Imaging bulk insulators with secondary electrons in an UHV STEM,
662-3 (J.Liu, G.G. Hembree and J.A. Venables).
200 High resolution Auger electron microscopy and spectroscopy of
supported metal particles, 690-1
(J.Liu, G.G. Hembree, G. Spinnler and J.A. Venables).
Items 201-203 are in Proc. EMAG '91, IoP Conf Series 119 (1991)
I 201 Secondary and Auger electron imaging in UHV-SEM and STEM, 33-38
(J.A. Venables and G.G. Hembree).
202 Angular resolved electron spectroscopy of Ag/Si(111) and
Ag/Ge(111) 147-150 ( M. Huang, E. Hofmann, P. Stenstrom,
C.J. Harland and J.A. Venables).
203 Studies of Ag/Ge(111) using biassed secondary electron imaging,
177-180 (F.L. Metcalfe, G. Raynerd and J.A. Venables).
204 Temperature dependent coverage of the root3 x root3 structure
of Ag/Si(111), Phys. Rev. B44 (1991) 13803-6
(G.Raynerd, M. Hardiman and J.A. Venables).
205 Competing processes and controlling energies at the Ag/Si(111)
interface, Surface Sci. 261 (1992) 251-266
(G. Raynerd, T.N. Doust and J.A. Venables).
206 High resolution Auger electron spectroscopy and microscopy of a
supported metal catalyst, Surface Sci. 262 (1992) L111-114
(J.Liu, G.G. Hembree, G.Spinnler and J.A. Venables).
207 Nanometer resolution scanning Auger electron microscopy,
Ultramicroscopy 49 (1992) 109-120
(G.G. Hembree and J.A. Venables).
208 High resolution Auger electron imaging of supported metal
particles, Catalysis Letters 15 (1992) 133-143
(J.Liu, G.G. Hembree, G. Spinnler and J.A. Venables).
208 Imaging small metal particles with Auger electrons,
Proc. EMSA 50 (1992) 308-9
(J.Liu, G.G. Hembree, G.E. Spinnler and J.A. Venables).
I 209 Atomic processes in silicon hetero-epitaxy, Proc. MRS Symposium
263 (1992) 3-8 (J.A. Venables, J.S. Drucker and G. Raynerd).
I 210 Surface studies in UHV-SEM and STEM, Proc. ICXOM-92 (IoP Conf.
Ser. 130 (1993) 415-422 (J.A. Venables, G.G. Hembree, J.Liu,
J.S. Drucker, M. Huang, F.L. Metcalfe and R.H. Milne).
I 211 Surface studies in UHV-SEM and STEM, J. Microscopy 170 (1993)
193-199 (R.H. Milne, G.G. Hembree, J.S. Drucker, C.J. Harland
and J.A. Venables).
212 Development of an angle resolving electron spectrometer,
Surf. Int. Anal. 20 (1993) 666-674
(M. Huang, C.J. Harland and J.A. Venables).
213 Some comparisons af Ag deposits on Ge and Si(111), Proc. MRS
Symposium 280 (1993) 55-58 ( F.L. Metcalfe and J.A. Venables).
Items 214 and 215 are in Proc. EMAG '93 (IoP Conf Ser 138, 1993)
214 THEED of sub-monolayer phases of xenon adsorbed on graphite,
221-224 (T.E.A. Zerrouk, M. Hamichi, R.H. Milne,
J.D.H. Pilkington and J.A. Venables).
215 Biassed secondary electron microscopy of Cs/Si(100), 197-200
(M. Azim, R.H. Milne, R. Persaud and J.A. Venables).
216 Nanometer-resolution surface analysis with Auger electrons,
Ultramicroscopy 52 (1993) 369-376
(J.Liu, G.G. Hembree, G.E. Spinnler and J.A. Venables).
217 Caesium an Si(100) studied by biassed secondary electron
microscopy, Scanning Microscopy 7 (1993) 1153-60 (M.Azim,
C.J. Harland, T.J. Martin, R.H. Milne and J.A. Venables).
I 218 Atomic processes in crystal growth, Surf. Sci. 299/300 (1994)
798-817 (J.A. Venables, invited paper for 30th anniversary volumes).
219 Coupled diffusion equation solutions to Ag/Ge(111) and Cs/Si(100)
interactions, Proc. MRS Symposium 317 (1994) 83-87 (J.A. Venables,
R. Persaud, F.L. Metcalfe, R.H. Milne and M. Azim).
I 220 Advances in Auger electron spectroscopy and imaging,
ICEM-13, Paris, 1 (1994) 759-762 (J.A. Venables, G.G. Hembree,
J. Liu, C.J. Harland and M. Huang).
221 Surface processes at the Ag/Fe(110) interface ICEM-13, Paris,
2 (1994) 1021-2 (H. Noro, R. Persaud and J.A. Venables).
I 222 Electron diffraction in UHV SEM, REM and TEM, Proc. 50th
MSA Meeting, New Orleans, (1994) 594-5 (J.A. Venables, C.J. Harland,
P.A. Bennett and T.E.A. Zerrouk).
223 Observation of solid-hexatic-liquid phase transitions of
sub-monolayer xenon on graphite by transmission electron
diffraction, Phys. Rev. B50 (1994) 8946-49
(T.E.A. Zerrouk, M.Hamichi, J.D.H. Pilkington and J.A. Venables).
I 224 Rate and diffusion equation analyses of surface processes
J. Phys. Chem. Solids 55 (1994) 955-964 (R.W. Balluffi Fest)
(J.A. Venables, R. Persaud, F.L. Metcalfe, R.H. Milne and M. Azim).
225 Linear diffusion profiles due to long range adsorbate
interactions: Cs/Si(100), Phys. Rev. Lett 73 (1994) 1396-99
(R.H. Milne, M.Azim, R. Persaud and J.A. Venables).
I 226 Mechanisms of thin film growth, invited talks/ extended abstract
for Summer Schools at Chlum, Czech Republic, and Helsinge, Denmark
July-August, 1994, published in Growth and applications of thin
films, eds L. Eckertova and T. Rusicka, Prometheus Publishing,
Prague, Czech Republic (1994) 1-4 (J.A. Venables).
I 227 Recent surface studies using biassed secondary electron imaging
Scanning Microscopy, 8 (1994) 803-812 (R. Persaud, H. Noro, M. Azim,
R.H. Milne and J.A. Venables) invited talk given by R. Persaud.
228 Growth and diffusion of Ag on Fe(110), Vacuum 46 (1995) 1173-1176
(H. Noro, R. Persaud and J.A. Venables)
229 Quantitative AES analysis of Ge surface segregation in
Si/Ge/Si(100) heterostructures, Appl. Phys. Lett. 67 (1995)
276-278 (Y. Li, G.G. Hembree and J.A. Venables)
230 Surface diffusion of Cs on Si(100)2x1, Surface Sci. 336 (1995)
63-75 (R.H. Milne, M. Azim, R. Persaud and J.A. Venables)
231 Auger layer growth calculations for A/B/A heterostructures,
J. Phys. D29 (1996) 240-245 (J.A. Venables, Y. Li, G.G. Hembree,
H. Noro and R. Persaud); see ref 240 for update.
232 Growth of nanometer-size metallic particles on CaF2(111),
J. Appl. Phys. 80 (1996) 1161-1170 (K.R. Heim, S.T. Coyle,
G.G. Hembree, J.A. Venables and M.R. Scheinfein)
233 Interdiffusion during the growth of Fe on Ag/Fe(110),
Materials Res. Soc. 399 (1996) 207-212 (R. Persaud, H. Noro and
J.A. Venables)
234 Surface diffusion of Ag on Fe(110), Surface Sci. 357/358 (1996)
879-884 (H. Noro, R. Persaud and J.A. Venables)
235 Comparisons of Ag deposits on Ge and Si(111), Surface Sci. 369
(1996) 99-107 (F.L. Metcalfe and J.A. Venables)
236 Competing processes and controlling energies at the Ag/Ge(111)
interface, Surface Sci. 371 (1997) 420-430
(J.A. Venables, F.L. Metcalfe and A. Sugawara)
I 237 Nucleation, growth and pattern formation in heteroepitaxy
Physica A239 (1997) 35-46 (J.A. Venables)
B 238 Surface processes in epitaxial growth; Chapter 1 of Growth and
properties of ultrathin epitaxial layers eds D.A. King and
D.P. Woodruff (Elsevier, 1997) p1-45 (J.A. Venables)
I 239 Nucleation on defects in heteroepitaxy
Materials Res. Soc. 440 (1997) 129-140 (J.A. Venables)
240 Auger layer growth calculations for A/B/A heterostructures:
Correction and Comment, J. Phys. D30 (1997) 3163-5
(J.A. Venables and R. Persaud)
241 Structure and intermixing in Fe/Fe(110) and Fe/Ag/Fe(110)
multilayers, Surface Sci. 401 (1998) 12-21
(R. Persaud, H. Noro and J.A. Venables)
242 Predicting nucleation and growth processes: atomistic
modelling of metal atoms on ionic substrates, Phys. Rev. B57
(1998) 6715-6719 (J.H. Harding, A.M. Stoneham and J.A. Venables)
243 Graduate education on the internet, Physics Education 33 (1998)
157-163 (J.A. Venables)
244 Specialist graduate education using the web, J. Materials
Education 20 (1998) 57-63 (J.A. Venables)
B 245 Atomic interactions and surface processes in heteroepitaxy;
Chapter 1 of Heteroepitaxy:thin film systems, eds W.K. Liu
and M.B. Santos (World Scientific, 1999) 1-63 (J.A. Venables)
I 246 Nucleation and growth of supported metal clusters at defect sites on
MgO and NaCl(001) surfaces: the cases of Pd and Ag, Materials Res.
Soc. 570 (1999) 51-60 (J.A. Venables, G. Haas, H. Brune and J.H. Harding)